Surface Micromachining:

• Low stress doped poly-Si deposition
• Low stress SiN deposition
• High etch rate sacrificial layer deposition
• Wet and dry release techniques

Bulk Micromachining:

• Anisotropic (KOH & TMAH) Silicon etching
• Deep Si etching by Bosch ICP process
• Double side pattern alignment
• RIE etching of poly-Si, SiN, SiO2, TaN, Ta2O5, Metals
• Cu, Au, Ni, Ni-Fe electroplating
• Through wafer interconnection

SOI Micromachining & SCREM:

• Single crystal structure layer for better performance
• Thick structure to reduce Z-axis cross sensitivity one mark simple process
• The trade-off-limited design flexibility
• Use commercial SOI wafer or proprietary fusing bonded wafer

CMOS & MEMS Integration

• 5v/12v/18v/30v CMOS Capability for developing Monolithic smart MEMS
• Vertical integration of CMOS & MEMS wafers by wafer bonding

Wafer Level Packaging:

• Integrate various technologies such as Si, SiGe, GaAs, Compound Semiconductors thin film and thick film chips
• Flip Chip & Multi Chip module
• DCM-Direct Chip Module to cut cost
• First level package to protect delicate MEMS structures
• Flexibility to adopt the best available technology