Lithography

• Stepper 5:1
  • G-line
  • Minimum feature: 1 µm
  • Alignment accuracy: 0.2 µm
  • Overlay
• Contact aligner 1:1
  • Minimum feature: 3 µm
  • Alignment accuracy: 2 µm (front side align) & 4 µm (front to back side align)
• Spray coating
• Lift-off 
• Special materials: Polyimide, BCB, SU8, PBO, LOR, Black PR

Wafer Bonding

• Fusion bonding with or without cavities Si substrate. 
• Au/Sn, Ge/Al eutectic bonding with forming gas
• Anodic bond for silicon or SOI on glass wafers
• Adhesive bond
• Bond alignment accuracy ± 5µm
• Bonding in a controlled environment. 
  • Pressure range: 10^-3 mbar in vacuum ~ 2 bar in over pressure
  • With heater and contact force capability (Max. 40KN)