Process Capability

Lithography Process

Lithography  

  • Stepper 5:1
    • G-line
    • Minimum Feature: 1 µm
    • Alignment accuracy: 0.2 µm
    • Overlay
  • Contact Aligner 1:1
    • Minimum Feature: 3 µm
    • Alignment Accuracy: 2 µm (front side align) & 4 µm (front to back side align)
  • Spray Coating
  • Lift-off 
  • Special Materials: Polyimide, BCB, SU8, Protek, Black PR

 

     

 

Wafer Bonding

  • Fusion Bonding with or without Cavities Si Substrate. 
  • Au/Sn, Ge/Al eutectic bonding with forming gas
  • Anodic Bond for Silicon or SOI on Glass Wafers
  • Adhesive Bond
  • Bond Alignment Accuracy ± 5µm 
  • Bonding in a Controlled Environment. 
    • Pressure Range: 1x10-3 mbar in vacuum ~ 2 bar in over pressure
    • With Heater and Contact Force Capability (Max. 40KN)

 

     

 
 
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