製程能力

薄膜擴散製程

金屬化製程

  • Sputter Deposition: AlCu, Cu, Pt, Ta, Ta2O5, Ti, TiN, Au, TaAl, Cr, NiCr, Ni
  • Evaporation: Ti, Au, Cu, Pt, Ni, Ag, Cr, Al
  • Electroplating: Cu

 

薄膜製程

  • PECVD Oxide
  • PECVD Nitride
  • PECVD Amorphous Silicon
  • PECVD Silicon Carbide
  • PECVD PSG/BPSG

 

爐管製程

  • Thermal Oxidation (900-1050ºC)
  • LPCVD Nitride (Standard, Low stress)
  • LPCVD Poly-Silicon
  • Annealing
  • Metal alloy
  • RTP

 

 離子植入  

  • Medium Current: (Energy: ~ 160 keV, Dosage: 1012-1014 )
  • High Current: (Energy: ~ 250 keV, Dosage: 1014-1016 )
  • Species: B, BF2, P, As

 

 

            

 

    

 

 
 
回上頁
˄