金屬化製程

• Sputter Deposition: Ti, TiN, TiW, Al, AlCu, AlSiCu, TaAl, Ta, Ta2O5, Cu, Pt, Au
• Evaporation: Ti, Al, Cu, Ni, Au, Pt, AuSn, Cr, Ag
• Electroplating: Cu

薄膜製程

• PECVD Oxide
• PECVD Nitride
• PECVD Amorphous Silicon
• PECVD Silicon Carbide
• PECVD PSG/BPSG

爐管製程

• Thermal Oxidation (900-1150ºC)
• LPCVD Nitride (Standard, Low stress)
• LPCVD Poly-Silicon
• Annealing
• Metal alloy

 離子植入

• Medium Current: (Max Energy: 160 keV, Dose: 10¹²-10¹⁴ atom/cm²) 
• High Current: (Max Energy: 120 keV, Dose: 10¹⁴-10¹⁶ atom/cm²)
• Species: B, BF2, P, As